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FF200R12KE4P
  • FF200R12KE4P

FF200R12KE4P

Active and preferred

62 mm 1200 V, 200 A half-bridge IGBT module with trench/fieldstop IGBT4, optimized Emitter Controlled Diode and pre-applied Thermal Interface Material.

Infineon Technologies FF200R12KE4P Product Info

16 April 2026 0

Parameters

Configuration

half-bridge

Dimensions (length)

106.4 mm

Dimensions (width)

61.4 mm

Features

TIM

Housing

62 mm

IC(nom) / IF(nom)

200 A

IC max

200 A

Qualification

Industrial

Technology

IGBT4 - E4

VCE(sat) (Tvj=25°C typ)

1.75 V

VF (Tvj=25°C typ)

1.65 V

Voltage Class max

1200 V

Apps

Traction, Wind power, Motor control, Uninterruptible power supplies (UPS)

Features

  • Operating temperature up to 150 °C
  • UL/CSA Certif. with UL1557 E83336
  • Optimized switching softness
  • Reduced switching losses
  • High current capability
  • RoHS compliant

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