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IAUCN10S5L094D
  • IAUCN10S5L094D

IAUCN10S5L094D

Active and preferred

OptiMOS™ 5 100V automotive dual MOSFET offered in our reliable, dual SSO8 5x6mm2 SMD package. It features two independent MOSFETs integrated in one package for PCB area savings. It is designed specifically for high performance, high quality and the robustness needed for demanding automotive applications.

Infineon Technologies IAUCN10S5L094D Product Info

16 April 2026 0

Parameters

Country of Assembly (Last BE site, current, subject to change)

Malaysia

Country of Diffusion (Last FE site, current, subject to change)

Austria, Germany

ID (@25°C) max

60 A

Launch year

2024

Operating Temperature range

-55 °C to 175 °C

Package

dual SS08 (PG-TDSON-8)

Planned to be available until at least

2038

Polarity

N+N

QG (typ @10V)

23 nC

QG (typ @10V) max

30 nC

Qualification

Automotive

RDS (on) (@10V) max

9.4 mΩ

Technology

OptiMOS™5

VDS max

100 V

VGS(th) range

1.2 V to 2.2 V

VGS(th)

1.7 V

Features

  • RDS(on) reduced > 50% from prior best
  • Industry’s best RDS(on)
  • 60A current rating; +200% from prior
  • Fast switching times (turn on/off)
  • Extended qualification beyond AEC-Q101
  • Enhanced electrical testing
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • 100% Avalanche tested
  • PPAP Capable Device

Description

  • Minimized conduction losses
  • Superior switching performance
  • High power density in 5x6mm package
  • Integration; two MOSFETs in a package
  • Integration; less SMD assembly time
  • PCB layout flexibility
  • Designed for Automotive robustness
  • High quality production for Automotive

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