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IAUCN04S7N024D
  • IAUCN04S7N024D

IAUCN04S7N024D

Active and preferred

Infineon Technologies IAUCN04S7N024D Product Info

16 April 2026 10

Parameters

Country of Assembly (Last BE site, current, subject to change)

Malaysia

Country of Diffusion (Last FE site, current, subject to change)

Austria, Germany

ID (@25°C) max

60 A

Launch year

2024

Operating Temperature range

-55 °C to 175 °C

Package

PG-TDSON-8

Planned to be available until at least

2038

Polarity

N+N

QG (typ @10V) max

30 nC

QG (typ @10V)

23 nC

Qualification

Automotive

RDS (on) (@10V) max

2.49 mΩ

Technology

OptiMOS™7

VDS max

40 V

VGS(th) range

2.2 V to 3 V

VGS(th)

2.6 V

Features

  • OptiMOS™ 7 40 V power MOSFET
  • N-channel-Enhancement mode-Normal Level
  • Extended qualification beyond AEC-Q101
  • Enhanced electrical testing
  • Robust design
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • Green product (RoHS compliant)
  • 100% Avalanche tested
  • PPAP Capable Device

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