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S79FL512SDSMFBG01
  • S79FL512SDSMFBG01

S79FL512SDSMFBG01

Active and preferred

The S79FL512SDSMFBG01 is a 512 Mb (64 MB) flash memory device using Infineon's 65-nm MIRRORBIT™ technology and Eclipse architecture for fast program and erase speeds. It features dual-quad SPI with DDR read up to 80 MHz (160 MBps), a 1024-byte programming buffer, and supports 100,000 program-erase cycles minimum. Operating from 2.7 V to 3.6 V in a 16-pin SOIC package, it offers advanced sector protection, ECC, and AEC-Q100 qualification.

Infineon Technologies S79FL512SDSMFBG01 Product Info

16 April 2026 0

Parameters

Density

512 MBit

Family

FL-S

Interface Bandwidth

160 MByte/s

Interface Frequency (SDR/DDR) (MHz)

133 / 80

Interfaces

Dual-Quad SPI

Lead Ball Finish

Matte Tin Plating

Operating Temperature range

-40 °C to 105 °C

Operating Voltage range

2.7 V to 3.6 V

Operating Voltage

3 V

Peak Reflow Temp

260 °C

Planned to be available until at least

See roadmap

Qualification

Automotive

Features

  • SPI interface with Dual-Quad support
  • 104 MHz Quad Read, 80 MHz Quad DDR Read
  • 24- or 32-bit addressing options
  • 3 MBps programming speed
  • Hardware ECC with single bit correction
  • Hybrid and uniform sector erase options
  • 100,000 program-erase cycles per sector
  • 20 year data retention
  • 2048-byte OTP security region
  • Flexible block and sector protection
  • Hardware Reset input (RESET#)
  • Core supply voltage: 2.7 V to 3.6 V

Description

  • High-speed reads enable fast data access
  • Flexible addressing supports large designs
  • Fast programming boosts throughput
  • ECC improves data reliability
  • Hybrid/uniform erase fits varied needs
  • High endurance for long device life
  • Long retention secures critical data
  • OTP region enhances system security
  • Sector/block protection prevents data loss
  • Hardware reset ensures safe recovery
  • Wide supply range eases system design
  • Dual-Quad SPI maximizes interface speed

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