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IAUC60N04S6L030H
  • IAUC60N04S6L030H

IAUC60N04S6L030H

The dual SSO8 5x6 mm² package is perfect for single loads. For bridge applications, routing with a dual MOSFET is complex and may require a larger PCB area, with its current ratings limited to 20A. The integrated half-bridge reduces PCB area by providing enhanced routing for bridge applications. It is designed based on optimized OptiMOS™6 technology, offering a wide RDS(ON) range from 3.0 mΩ to 7.0 mΩ and an increased current rating of 60A.

Infineon Technologies IAUC60N04S6L030H Product Info

16 April 2026 0

Parameters

Country of Assembly (Last BE site, current, subject to change)

Malaysia

Country of Diffusion (Last FE site, current, subject to change)

Austria, Germany

ID (@25°C) max

60 A

Launch year

2020

Operating Temperature range

-55 °C to 175 °C

Package

PG-TDSON-8

Planned to be available until at least

2029

Polarity

N+N

QG (typ @10V)

27 nC

QG (typ @10V) max

35 nC

Qualification

Automotive

RDS (on) (@10V) max

3 mΩ

Technology

OptiMOS™6

VDS max

40 V

VGS(th) range

1.2 V to 2 V

VGS(th)

1.6 V

Apps

Automotive electric pumps & fans 12 V

Features

  • Integrated half-bridge SSO8 (5x6)
  • 5x6 mm² reduced footprint
  • Optimized layout for B6 apps
  • Optimized switching & power losses
  • Package JEDEC listed
  • Cost efficiency for low & mid power drive
  • Cu-clip soldered
  • PPAP Capable Device

Description

  • Enhanced routing for bridge applications results
  • Optimized for OptiMOS™6
  • RDS(ON) range 3.0 mΩ - 7.0 mΩ
  • Increased DS current rating of 60A

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