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IQE046N08LM5
  • IQE046N08LM5

IQE046N08LM5

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IQE046N08LM5 is Infineon’s new best-in-class OptiMOS™ 5 power MOSFET 80 V logic level in PQFN 3.3x3.3 Source-Down package, offering the industry’s lowest on-state resistance RDS(on) at 25˚C and superior thermal performance. The OptiMOS™ Source-Down is a revolutionary technology with a flipped silicon die inside, offering several advantages such as better thermal capability, higher power density and improved layout possibilities. Combined with industrial standard PQFN 3.3x3.3 package, IQE046N08LM5 is targeted for high power density and performance SMPS products commonly found in telecom and data servers.

Infineon Technologies IQE046N08LM5 Product Info

16 April 2026 0

Parameters

Budgetary Price €/1k

1.06

ID (@25°C) max

99 A

IDpuls max

396 A

Operating Temperature range

-55 °C to 175 °C

Package

PQFN 3.3x3.3 Source-Down

Polarity

N

Ptot max

100 W

QG (typ @4.5V)

19 nC

QG (typ @10V)

38 nC

RDS (on) (@4.5V) max

5.9 mΩ

RDS (on) (@10V) max

4.6 mΩ

Special Features

Logic Level

VDS max

80 V

VGS(th) range

1.1 V to 2.3 V

VGS(th)

1.7 V

Features

  • Logic level allows lower Qrr
  • Reduced RDS(on) by up to 30%
  • Improved RthJCover PQFN
  • Center Gate optimized for paralleling

Description

  • Enabling highest power density
  • Superior thermal performance
  • Efficient layout for space use
  • Simplified MOSFET parallelization

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