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FZ1200R45HL3_S7
  • FZ1200R45HL3_S7

FZ1200R45HL3_S7

IHV-B 4500 V, 1200 A 190 mm single switch IGBT Module with Trench/Fieldstop IGBT3, Emitter Controlled 3 diode and isolated AlSiC Base Plate - The best solution for your HVDC application. In comparison to the standard type the _S7 type can be driven with VGE=25 V instead of the usual 15 V

Infineon Technologies FZ1200R45HL3_S7 Product Info

16 April 2026 0

Parameters

Configuration

Single switch

Dimensions (width)

140 mm

Dimensions (length)

190 mm

Features

VGE = 25 V

Housing

IHV B

IC(nom) / IF(nom)

1200 A

IC max

1200 A

Qualification

Industrial, Traction

Technology

IGBT3 - L3

VCE(sat) (Tvj=25°C typ)

2.15 V

VCES / VRRM

4500 V

VF (Tvj=25°C typ)

2.5 V

Voltage Class max

4500 V

Apps

High-voltage direct current (HVDC), Motor control

Features

  • High DC stability
  • High short-circuit capability
  • Lowest conduction losses
  • Low VCEsat
  • Rectangular non truncated (RB-)SOA
  • Tvj op=150°C
  • AlSiC base plate with AlN substrate
  • for increased Thermal cycling
  • Fire & smoke EN45545 R22, R23 : HL3
  • Package with CTI > 600
  • Gate emitter voltage of 25 V

Description

  • Standardized housing: 190x140x38 mm
  • decades of field experience
  • Long service life
  • Unbeatable dynamic robustness
  • Low FIT Rate
  • UL recognized
  • Remark:
  • EOL since 2023
  • Replacement type is FZ1200R45HL4_S7

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