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FS410R12A7P1B
  • FS410R12A7P1B

FS410R12A7P1B

Active and preferred

The power module implements Infineon’s next generation IGBT chip technology 1200V, optimized for electric drive train applications, from mid- to high-range automotive power classes.

Infineon Technologies FS410R12A7P1B Product Info

16 April 2026 0

Parameters

Configuration

Sixpack

Features

PinFin Base Plate

Housing

HybridPACK™ Drive G2

IC(nom) / IF(nom)

300 A

Launch year

2025

Planned to be available until at least

2035

Qualification

Automotive

Technology

IGBT EDT1200

VCES (Tvj=25°C typ)

1200 V

Voltage Class max

1200 V

Features

  • VCES = 1200 V
  • ICN = 410 A / ICRM = 820 A
  • Low VCE,sat
  • Low switching losses
  • Low Qg and Crss
  • Low inductive design
  • Tvj,op = 175°C
  • Integrated on-chip temperature sensor
  • Direct-cooled PinFin base plate
  • PCB and cooler assembly guides
  • PressFIT contact technology
  • RoHS compliant, lead-free

Description

  • Higher temperature cycling capability
  • Integrated diode temperature sensors
  • New plastic material
  • Better temperature capability
  • PressFIT Contact Technology
  • RoHS compliant
  • Completely Pb free
  • Superior reliability

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