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2ED1321S12M
  • 2ED1321S12M

2ED1321S12M

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EiceDRIVER™ 1200 V high-side/low-side gate driver IC with typical 2.3 A source, 4.6 A sink current in DSO-16 (300mils) package for 1200 V SiC MOSFET and IGBT power devices. The 2ED1321S12M is based on our SOI-technology which has an excellent ruggedness and noise immunity against negative transient voltages on VS pin. Since the device has no parasitic thyristor structures, the design is very robust against parasitic latch up across the operating temperature and voltage range.

Infineon Technologies 2ED1321S12M Product Info

16 April 2026 0

Parameters

Channels

2

Configuration

Low-side, High-side and low-side, High-side

Input Vcc min

13 V

Isolation Type

Functional levelshift SOI (Silicon On Insulator)

Output Current (Source)

2.3 A

Output Current (Sink)

4.6 A

Product Name

2ED1321S12M

Qualification

Industrial

Turn Off Propagation Delay

350 ns

Turn On Propagation Delay

350 ns

VBS UVLO (Off)

11.3 V

VBS UVLO (On)

12.2 V

VCC UVLO (Off)

11.3 V

VCC UVLO (On)

12.2 V

Voltage Class

1200 V

Apps

Ceiling fans, Industrial motor drives and controls, Heating ventilation and air conditioning (HVAC), Residential heat pumps

Features

  • Unique thin-film (SOI)-technology
  • Max. boots. volt. (VB node) +1225 V
  • Operating voltages < + 1200 V
  • Negative VS transient vol. immunity
  • 2.3 A/4.6 A peak output source/sink
  • Integrated over-current protection
  • ± 5% high accu. reference threshold
  • Shutdown less than 1 us
  • Integr. ultra-fast bootstrap diode
  • Dead-time & shoot-through preventi.
  • Enable, Fault & programmable Fault
  • Logic operational < –8 V on VS Pin

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