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FF900R12IP4D
  • FF900R12IP4D

FF900R12IP4D

Active and preferred

PrimePACK™ 2 1200 V, 900 A half-bridge IGBT module with TRENCHSTOP™ IGBT4, enlarged Emitter Controlled 4 diode, NTC and soft switching chip.

Infineon Technologies FF900R12IP4D Product Info

16 April 2026 0

Parameters

Configuration

half-bridge

Dimensions (width)

89 mm

Dimensions (length)

172 mm

Features

Enlarged Diode

Housing

PrimePACK™ 2

IC(nom) / IF(nom)

900 A

IC max

900 A

Qualification

Industrial

Technology

IGBT4 - P4

VCE(sat) (Tvj=25°C typ)

1.7 V

VF (Tvj=25°C typ)

1.65 V

Voltage Class max

1200 V

Apps

Automotive battery management system (BMS) - high-voltage, Traction, Wind power, Motor control, Uninterruptible power supplies (UPS)

Features

  • Extended operation temp. Tvj op
  • High DC stability
  • High current density
  • Low switching losses
  • Unbeatable robustness
  • VCEsatwith positive temp. coeffici.
  • 4 kV AC 1 min insulation
  • Package with CTI > 400
  • High creepage & clearance distances
  • High power & thermal cycling capab.
  • Substrate for low therm. resistance
  • UL recognized

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