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S25HS01GTFAMHV013
  • S25HS01GTFAMHV013

S25HS01GTFAMHV013

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The S25HS01GTFAMHV013 is a 1 Gb SEMPER™ NOR Flash using Infineon's 45-nm MIRRORBIT™ technology for high density and reliability. Operating at 1.7 V to 2.0 V, it offers hybrid and uniform sector architectures and supports Quad SPI up to 102 MBps. ISO26262 ASIL B compliant and AEC-Q100 Grade 1 qualified, it integrates ECC for single-bit correction and double-bit detection, Endurance Flex for up to 2,560,000 cycles, and advanced protection features.

Infineon Technologies S25HS01GTFAMHV013 Product Info

16 April 2026 0

Parameters

Density

1 GBit

Family

HS-T

Interface Bandwidth

102 MByte/s

Interface Frequency (SDR/DDR) (MHz)

166 / 102

Interfaces

Quad SPI

Lead Ball Finish

Matte Tin Plating

Operating Temperature range

-40 °C to 105 °C

Operating Voltage range

1.7 V to 2 V

Operating Voltage

1.8 V

Peak Reflow Temp

260 °C

Planned to be available until at least

2037

Qualification

Industrial

Features

  • 45-nm MIRRORBIT™ stores 2 bits/cell
  • Uniform and hybrid sector architectures
  • 256/512-byte page programming buffer
  • 1024-byte OTP secure silicon array
  • Quad SPI up to 102 MBps (DDR, 102 MHz)
  • Dual SPI up to 41.5 MBps (SDR, 166 MHz)
  • SPI up to 21 MBps (SDR, 166 MHz)
  • Functional safety: ISO26262 ASIL B compliant
  • Endurance Flex: high-endurance/retention
  • Data integrity CRC and built-in ECC (SECDED)
  • SafeBoot for init failure/config corruption
  • Legacy and advanced sector protection

Description

  • High density, reliable storage in small
  • Flexible sectoring for varied application
  • Fast programming for efficient data handling
  • Secure OTP for device authentication
  • High-speed Quad/Dual SPI for rapid data
  • Industry-leading functional safety for
  • Partitioning optimizes endurance
  • Robust data integrity with CRC and ECC
  • SafeBoot ensures system recovery and uptime
  • Advanced protection prevents unauthorized
  • Instant boot accelerates system startup
  • Hardware reset enables reliable system

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