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FF2MR12W3M1H_B11
  • FF2MR12W3M1H_B11

FF2MR12W3M1H_B11

Active and preferred

EasyDUAL™ 3B 1200 V / 1.44 mΩ half-bridge module with CoolSiC™ MOSFET with enhanced generation 1, integrated NTC temperature sensor and PressFIT Contact Technology .

Infineon Technologies FF2MR12W3M1H_B11 Product Info

16 April 2026 0

Parameters

Applications

UPS,Solar,Servo drives,Traction,ESS,CAV,FuelCell

Configuration

Half-bridge

Dimensions (width)

62 mm

Dimensions (length)

109.85 mm

Features

PressFIT

Housing

Easy 3B

Qualification

Industrial

RDS (on) (@ Tj = 25°C)

1.44 mΩ

Apps

Battery energy storage (BESS), Servo motor drive and control, Medium voltage (MV) drive, Traction, Photovoltaic, Power conversion, Offline UPS - high frequency transformer

Features

  • Best-in-class package: 12 mm height
  • Easy module packages
  • Very low module stray inductance
  • Low and equal gate inductances
  • Symmetrical internal chip layouts
  • Wide RBSOA
  • 1200 V CoolSiC™ MOSFET
  • Gate drive vol.: +15…+18 V & 0…-5 V
  • Max. gate-source v.: +23 V & -10 V
  • Tvjop under overload condi. < 175°C
  • PressFIT pins

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