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ISP670P06NMA
  • ISP670P06NMA

ISP670P06NMA

Active and preferred

ISP670P06NMA features a low RDS(on) of 0.167 Ohm for easy power loss management making it the best-in-class MOSFET in a SOT-223 package targeted for automotive application. The main advantage of a P-channel device is the reduction of design complexity.In addition, the avalanche ruggedness capability of this MOSFET makes it suitable for high demanding applications.

Infineon Technologies ISP670P06NMA Product Info

16 April 2026 0

Parameters

ID (@25°C) max

-6.4 A

IDpuls max

-25.6 A

Operating Temperature range

-55 °C to 150 °C

Package

SOT-223

Polarity

P

QG (typ @10V)

-36 nC

RDS (on) (@10V) max

67 mΩ

VDS max

-60 V

VGS(th) range

-2.1 V to -4 V

Apps

Automotive

Features

  • Automotive qualification
  • Lowest RDS(on) in portfolio
  • Supports a wide variety of applications
  • Robust, reliable performance

Description

  • Quality and reliability
  • Low conduction lossses
  • Long production lifetime and support
  • Extention of battery lifetime

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