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FF11MR12W2M1H_B70
  • FF11MR12W2M1H_B70

FF11MR12W2M1H_B70

Active and preferred

EasyDUAL™ 2B CoolSiC™ MOSFET half-bridge module 1200 V, 11 mΩ G1 with integrated NTC temperature sensor, PressFIT contact technology and aluminium nitride ceramic.

Infineon Technologies FF11MR12W2M1H_B70 Product Info

16 April 2026 0

Parameters

Applications

SST, UPS, ESS, EV Charger, Solar

Configuration

Half-bridge

Dimensions (width)

48 mm

Dimensions (length)

62.8 mm

Features

PressFIT

Housing

Easy 2B

Qualification

Industrial

RDS (on) (@ Tj = 25°C)

10.8 mΩ

Apps

Fuel-cell DC-DC boost converter, Battery energy storage (BESS), EV charging, Photovoltaic, Uninterruptible power supplies (UPS)

Features

  • Best in class with 12.25mm height
  • Leading edge WBG material
  • Very low module stray inductance
  • Enhanced CoolSiC™ MOSFET Gen 1
  • Enlarged gate drive voltage window
  • Gate-source voltages of +23 V and -10 V
  • Tvjop under overload condition up to 175°C
  • PressFIT pins
  • Integrated NTC temperature sensor

Description

  • Outstanding module efficiency
  • System cost advantages
  • System efficiency improvement
  • Reduced cooling requirements
  • Enabling higher frequency
  • Increase of power density
  • Better thermal conductivity of DCB material

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