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F3L3MR12W3M1H_H11
  • F3L3MR12W3M1H_H11

F3L3MR12W3M1H_H11

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EasyPACK™ 3B CoolSiC™ MOSFET 1200 V, 3 mOhm ANPC module with L7, EC7, integrated NTC temperature sensor and High Current Pin.

Infineon Technologies F3L3MR12W3M1H_H11 Product Info

16 April 2026 0

Parameters

Applications

ESS

Configuration

3-Level

Dimensions (length)

110 mm

Dimensions (width)

62 mm

Features

PressFIT

Housing

Easy 3B

Qualification

Industrial

RDS (on) (@ Tj = 25°C)

3 mΩ

Apps

Battery energy storage (BESS)

Features

  • Easy family with 12mm height
  • enhanced generation 1 trench technology
  • Gate-source voltages of +23 V and -10 V
  • Very low stray inductance
  • Overload capabilities up to 175°C
  • High current pin

Description

  • Easy to design
  • Highest power density by lowest RDS
  • system cost advantages
  • low FIT rate for cosmic ray induced fail

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