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CY7S1061GE30-10BVM
  • CY7S1061GE30-10BVM

CY7S1061GE30-10BVM

Active and preferred

Infineon’s SRAM solutions offer a long-term support commitment, providing our customers with the assurance that they will continue to receive support and maintenance for their products over an extended period. Our asynchronous SRAMs are commonly used as expansion memory for cache and buffer memory applications, where their low power consumption and high-speed performance make them an ideal choice for defense applications.

Infineon Technologies CY7S1061GE30-10BVM Product Info

16 April 2026 0

Parameters

Density

16 MBit

Family

FAST SRAM

Interfaces

Parallel

Lead Ball Finish

Sn/Pb

Operating Temperature range

-55 °C to 125 °C

Operating Voltage (VCCQ) range

2.2 V to 3.6 V

Operating Voltage range

2.2 V to 3.6 V

Organization (X x Y)

1M x 16

Peak Reflow Temp

220 °C

Planned to be available until at least

2033

Qualification

Military

Speed

10 ns

Features

  • 16 Mbit density
  • 1M words x 16-bit organization
  • 10ns access speed
  • POWERSNOOZE™
  • Embedded error-correcting code (ECC)
  • for single-bit error correction
  • -55°C to 125°C
  • 48-ball VFBGA

Description

  • Efficient asynchronous SRAM solutions
  • Technology FIT rate of <0.3 PPM
  • 1000x more reliable than standard SRAMs

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