0
CY7C1618KV18-300BZXC
  • CY7C1618KV18-300BZXC

CY7C1618KV18-300BZXC

Infineon Technologies CY7C1618KV18-300BZXC Product Info

16 April 2026 1

Parameters

Architecture

DDR-II CIO

Bank Switching

N

Burst Length (Words)

2

Data Width

x 18

Density

144 MBit

ECC

N

Family

DDR-II CIO

Frequency

300 MHz

Interfaces

Parallel

Lead Ball Finish

Sn/Ag/Cu

On-Die Termination

N

Operating Temperature range

0 °C to 70 °C

Operating Voltage range

1.7 V to 1.9 V

Organization (X x Y)

8Mb x 18

Peak Reflow Temp

260 °C

Qualification

Commercial

Read Latency (Cycles)

1.5

Subscribe to Welllinkchips !
Your Name
* Email
Submit a request