Product
0
IMYH200R012M1H
  • IMYH200R012M1H

IMYH200R012M1H

Active and preferred

The CoolSiC™ 2000 V 12 mΩ SiC MOSFET in TO-247PLUS-4-HCC package has been designed to offer increased power density without compromising the system’s reliability even under demanding high voltage and switching frequency conditions. The low power losses of CoolSiC™ technology provide increased reliability thanks to the .XT interconnection technology in a 2000 V optimized package, enabling top efficiency in applications such as string inverters, solar power optimizer, EV charging and energy storage systems.

Infineon Technologies IMYH200R012M1H Product Info

16 April 2026 0

Parameters

Ciss

9700 pF

Coss

322 pF

ID (@25°C) max

123 A

Mounting

THT

Operating Temperature range

-55 °C to 175 °C

Package

PG-TO247-4-PLUS-NT14

Pin Count

4 Pins

Polarity

N

Ptot (@ TA=25°C) max

552 W

Qgd

44 nC

QG

246 nC

Qualification

Industrial

RDS (on) (@ Tj = 25°C)

12 mΩ

RthJA max

62 K/W

RthJC max

0.16 K/W

Technology

CoolSiC™ G1

Tj max

175 °C

VDS max

2000 V

Apps

Battery energy storage (BESS), EV charging, Photovoltaic

Features

  • VDSS = 2000 V for high DC-link
  • Up to 1500 VDC
  • Very Low switching losses
  • Benchmark gate threshold voltage
  • VGS(th) = 4.5 V
  • Robust diode for hard commutation
  • .XT interconnection technology
  • Improved humidity robustness
  • Innovative HCC package with
  • 14 mm creepage distances
  • 5.5 mm clearance distances

Subscribe to Welllinkchips !
Your Name
* Email
Popular Posts
Featured Parts More >
Submit a request
CONTACT US
Company address

WELL LINK CHIPS GROUP CO.,LIMITED FLAT/RM 1802 BEVERLY HOUSE 93-107 LOCKHART ROAD WANCHAI HK

Send Enquiry
SEND e-MAIL
Office hour from 9am to 6pm ,
Monday through Friday, UTC/GMT +8