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DF200R07W2H3_B77
  • DF200R07W2H3_B77

DF200R07W2H3_B77

Active and preferred

EasyPACK™ 2B 650 V, 200 A 3-level IGBT module with Trench/Fieldstop IGBT H3 and rapid diode and PressFIT / NTC.

Infineon Technologies DF200R07W2H3_B77 Product Info

16 April 2026 0

Parameters

Configuration

Booster

Features

PressFIT

Housing

EasyPACK™ 2B

IC(nom) / IF(nom)

200 A

IC max

200 A

Qualification

Industrial

Technology

IGBT3 - H3

VCE(sat) (Tvj=25°C typ)

1.46 V

VCES

650 V

VF (Tvj=25°C typ)

1.65 V

Voltage Class max

650 V

Apps

Photovoltaic, Motor control, Uninterruptible power supplies (UPS)

Features

  • Easy of use
  • Compact design
  • Optimized performance
  • Blocking voltage capability < 650 V
  • Low inductive design
  • Low switching losses
  • Low VCEsat
  • Al2O3 substrate
  • Compact design
  • PressFIT contact technology
  • Rugged mounting
  • Mounting clamp

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