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CY15B101N-ZS60XM
  • CY15B101N-ZS60XM

CY15B101N-ZS60XM

Active and preferred

F-RAM (Ferroelectric Random Access Memory or FeRAM) is a standalone non-volatile memory that enables you to instantly capture and preserve critical data when power is interrupted. They are ideal for mission-critical data logging applications like flight control error logging or life-enhancing patient monitoring devices. Designed in a low-power, small footprint, F-RAMs offer instant non-volatility and virtually unlimited endurance without compromising on speed or energy efficiency.

Infineon Technologies CY15B101N-ZS60XM Product Info

16 April 2026 0

Parameters

Density

1 MBit

Interfaces

Parallel

Lead Ball Finish

NiPdAu and Pure Sn

Operating Temperature range

-55 °C to 125 °C

Operating Voltage range

2 V to 3.6 V

Organization (X x Y)

64Kx16

Peak Reflow Temp

260 °C

Planned to be available until at least

2033

Qualification

Military

Speed

60 ns

Features

  • 1 Mbit (64K x 16) density
  • SRAM compatible, industry-standard 64K x 16 SRAM pinout
  • Infineon’s instant write technology
  • Infinite Read/Write endurance
  • 120-year data retention
  • -55°C to 125°C
  • 44-pin TSOP

Description

  • No battery concerns
  • Ultra-low power
  • Consume 200x less energy than EEPROMs
  • 3000x less than NOR flash
  • Performs write operations at bus speed
  • No write delays are incurred
  • Immune to external magnetic fields
  • True surface-mount, no rework steps
  • Superior for moisture, shock & vibration

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