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CY14V116G7-BZ30XI
  • CY14V116G7-BZ30XI

CY14V116G7-BZ30XI

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CY14V116G7-BZ30XI is a 16-Mbit nvSRAM combining SRAM with SONOS nonvolatile elements, accessed through an asynchronous NAND interface aligned to ONFI 1.0. It supports x16 data I/O with performance up to 33 MT/s per I/O and 30 ns access time. Hands-off AutoStore on power-down and software or power-up RECALL protect data for 20 years at 85°C with 1,000,000 STORE cycles, in a 165-ball FBGA.

Infineon Technologies CY14V116G7-BZ30XI Product Info

16 April 2026 0

Parameters

Density

16 MBit

Interfaces

Parallel

Lead Ball Finish

Sn/Ag/Cu

Operating Temperature range

-40 °C to 85 °C

Operating Voltage range

2.7 V to 3.6 V

Organization (X x Y)

1Mb x 16

Peak Reflow Temp

260 °C

Planned to be available until at least

2031

Qualification

Industrial

Speed

30 ns

Features

  • 16-Mbit nvSRAM (SRAM + SONOS)
  • ONFI 1.0 async NAND interface
  • x8 or x16 data bus
  • 33 MT/s per I/O, up to 528 Mbps
  • 30-ns access time (I/O)
  • AutoStore on power-down (VCAP)
  • Software or HSB hardware STORE
  • Power-up RECALL to SRAM
  • Status register (pass/fail, WP)
  • 20-year retention at 85°C
  • 1,000,000 nonvolatile STORE cycles
  • VCC 2.7-3.6 V; VCCQ 1.70-1.95 V

Description

  • SRAM-speed reads and writes
  • Drop-in NAND-style host interface
  • x16 option boosts bandwidth
  • 528 Mbps enables fast transfers
  • 30 ns cuts read latency
  • AutoStore protects on power loss
  • HW/SW STORE fits system control
  • RECALL restores data on startup
  • Status bits simplify monitoring
  • 20-year retention secures data
  • 1M STORE cycles support updates
  • Split rails ease level shifting

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