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CY14V101QS-SF108XQ
  • CY14V101QS-SF108XQ

CY14V101QS-SF108XQ

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CY14V101QS-SF108XQ is a 1-Mbit (128K × 8) Quad SPI nvSRAM that combines SRAM with SONOS nonvolatile cells for batteryless data retention. It supports SPI/DPI/QPI up to 108 MHz for read and write bandwidth up to 54 MBps, with AutoStore on power-down and RECALL on power-up, plus HSB hardware STORE. The nonvolatile array is rated for 20-year retention at 85°C. Operates from 2.7 V to 3.6 V core and 1.71 V to 2.0 V I/O over –40°C to 105°C.

Infineon Technologies CY14V101QS-SF108XQ Product Info

16 April 2026 6

Parameters

Density

1 MBit

Frequency

108 MHz

Interfaces

QSPI

Lead Ball Finish

Ni/Pd/Au

Operating Temperature range

-40 °C to 105 °C

Operating Voltage range

2.7 V to 3.6 V

Organization (X x Y)

128Kb × 8

Peak Reflow Temp

260 °C

Qualification

Industrial(Q)

Speed

0 ns

Features

  • 1-Mbit (128K × 8) nvSRAM array
  • SPI/DPI/QPI interface up to 108 MHz
  • 40 MHz READ with 0-cycle latency
  • Read and write bandwidth 54 MBps
  • SPI modes 0 and 3 (CPOL/CPHA)
  • Burst mode reads with rollover
  • Burst mode writes with rollover
  • AutoStore on power-down via VCAP
  • Auto RECALL on power-up
  • Software STORE/RECALL instructions
  • Hardware STORE and status via HSB
  • 20-year retention, 1M STORE cycles

Description

  • SRAM-speed access with NV safety
  • 108 MHz enables fast data transfer
  • 0-latency reads reduce wait states
  • 54 MBps supports high throughput
  • Easy host timing with SPI 0/3
  • Burst reads cut command overhead
  • Burst writes speed block updates
  • AutoStore protects on power loss
  • Power-up RECALL restores data fast
  • Software save/restore simplifies FW
  • HSB pin enables HW-managed backup
  • Long retention reduces service needs

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