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CY14V101NA-BA25XI
  • CY14V101NA-BA25XI

CY14V101NA-BA25XI

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CY14V101NA-BA25XI is a 1-Mbit (64 K × 16) parallel nvSRAM that combines fast SRAM with QuantumTrap nonvolatile storage per bit. It supports 25 ns access time, automatic STORE on power-down using an external capacitor, and RECALL on power-up or by software. Operates with 3.0 V to 3.6 V core VCC and 1.65 V to 1.95 V I/O VCCQ over -40°C to 85°C, with 20-year retention and 1,000K STORE cycles in a 48-ball FBGA.

Infineon Technologies CY14V101NA-BA25XI Product Info

16 April 2026 1

Parameters

Density

1 MBit

Interfaces

Parallel

Lead Ball Finish

Sn/Ag/Cu

Operating Temperature range

-40 °C to 85 °C

Operating Voltage range

2.7 V to 3.6 V

Organization (X x Y)

64Kb x 16

Peak Reflow Temp

260 °C

Planned to be available until at least

2033

Qualification

Industrial

Speed

25 ns

Features

  • 1-Mbit nvSRAM (128Kx8/64Kx16)
  • 25 ns and 45 ns access times
  • AutoStore on power-down (VCAP)
  • STORE via HSB pin or software
  • RECALL via power-up or software
  • 20-year data retention
  • 1M STORE cycles (QuantumTrap)
  • Infinite SRAM R/W and RECALL
  • Core VCC 3.0 V to 3.6 V
  • I/O VCCQ 1.65 V to 1.95 V
  • Standby current ISB max 8 mA
  • Input leakage IIX max ±1 µA

Description

  • SRAM-like fast random access
  • Auto backup at power loss
  • Avoids battery-backed SRAM
  • Manual STORE for checkpoints
  • Restores state after power returns
  • Keeps data for 20-year shelf life
  • Endures frequent nonvolatile saves
  • No wear-out in normal SRAM use
  • Fits standard 3.3 V core rails
  • Interfaces to 1.8 V logic levels
  • Lower idle power in standby
  • Low leakage reduces bus loading

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