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CY14B256LA-ZS25XI
  • CY14B256LA-ZS25XI

CY14B256LA-ZS25XI

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CY14B256LA-ZS25XI is a 256-Kbit (32 K × 8) parallel nvSRAM combining fast SRAM with QuantumTrap nonvolatile storage. It runs from 2.7 V to 3.6 V over −40°C to +85°C and supports 25 ns access. Data is automatically stored on power-down using a 61 µF to 180 µF VCAP capacitor and recalled on power-up; STORE/RECALL can also be initiated by HSB pin or software. It is rated for 20-year data retention and 1 million nonvolatile STORE cycles.

Infineon Technologies CY14B256LA-ZS25XI Product Info

16 April 2026 0

Parameters

Density

256 kBit

Interfaces

Parallel

Lead Ball Finish

Ni/Pd/Au

Operating Temperature range

-40 °C to 85 °C

Operating Voltage (VCCQ) max

3.6 V

Operating Voltage range

2.7 V to 3.6 V

Organization (X x Y)

32Kb x 8

Peak Reflow Temp

260 °C

Planned to be available until at least

2033

Qualification

Industrial

Speed

25 ns

Features

  • 32 K × 8 parallel SRAM interface
  • QuantumTrap nonvolatile per cell
  • AutoStore on power-down via VCAP
  • STORE via HSB pin control
  • STORE/RECALL via 6-read sequence
  • Parallel STORE/RECALL of all cells
  • 2.7 V to 3.6 V single-supply
  • 1,000 K nonvolatile STORE cycles
  • 20-year data retention
  • Infinite SRAM read/write cycles
  • Standby current max 5 mA
  • Input leakage ±1 µA (non-HSB)

Description

  • Keeps data on power loss automatically
  • No battery needed for data backup
  • Simple parallel bus like SRAM
  • Flexible STORE control options
  • Software-only backup/restore control
  • Fast recovery after power returns
  • Works from common 3 V rails
  • Long-lived logging of key data
  • Retains configuration for 20 years
  • Unlimited runtime SRAM updates
  • Cuts idle power in standby modes
  • Reduces leakage-sensitive designs

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