0
IAUCN04S7L024D
  • IAUCN04S7L024D

IAUCN04S7L024D

Active and preferred

The new automotive OptiMOS™-7 40 V dual SSO8 MOSFET is offered in our reliable SSO8 5x6mm2 SMD package. It features two independent N-channel MOSFETs integrated in one package for PCB area savings. It is designed specifically for high performance, high quality and the robustness needed for demanding and cost-efficient power automotive applications. The new portfolio provides a wide RDS range from 1.94 mΩ to 5.59 mΩ combined with an increased current rating of 60 A

Infineon Technologies IAUCN04S7L024D Product Info

16 April 2026 10

Parameters

Country of Assembly (Last BE site, current, subject to change)

Malaysia

Country of Diffusion (Last FE site, current, subject to change)

Austria, Germany

Family

Automotive MOSFET

ID (@25°C) max

60 A

Launch year

2026

Operating Temperature range

-55 °C to 175 °C

Package

PG-TDSON-8

Planned to be available until at least

2038

Polarity

N+N

QG (typ @10V) max

35 nC

QG (typ @10V)

27 nC

Qualification

Automotive

RDS (on) (@10V) max

2.49 mΩ

Technology

OptiMOS™7

VDS max

40 V

VGS(th) range

1.2 V to 1.8 V

VGS(th)

1.5 V

Features

  • 5x6 mm² small footprint
  • 60 A high current capability
  • Leading-edge OptiMOS™7 40 V
  • RDS(on) from 1.94 mΩ to 5.59 mΩ
  • Leadless package with Cu-clip
  • High avalanche capability

Description

  • Highest power & current density
  • High thermal capacity leadframe package
  • Reduced conduction losses
  • Optimized switching behavior
  • Reduced form factor
  • Industry standard package
  • JEDEC standard PG-TDSON-8

Subscribe to Welllinkchips !
Your Name
* Email
Submit a request