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1EDI10I12MH
  • 1EDI10I12MH

1EDI10I12MH

EiceDRIVER™ 1200 V high-side gate driver IC with typical 2.2 A source and 2.3 A sink currents in a wide body DSO-8 package with UL certified galvanic isolation, active Miller clamp and short circuit clamping for IGBT Modules .For higher isolation rating, higher current, shorter propagation delay, check out our X3 Compact family , 1ED3122MU12H . The DSO-8 150mil narrow body version with great price performance ratio is also available: 1EDI10I12MF

Infineon Technologies 1EDI10I12MH Product Info

16 April 2026 0

Parameters

Channels

1

Configuration

High-side

Input Vcc range

3.1 V to 17 V

Isolation Type

Galvanic isolation - Functional

Output Current (Source)

2.2 A

Output Current (Sink)

2.3 A

Qualification

Industrial

Turn Off Propagation Delay

300 ns

Turn On Propagation Delay

300 ns

VBS UVLO (On)

12 V

VBS UVLO (Off)

11.1 V

VCC UVLO (On)

2.85 V

VCC UVLO (Off)

2.75 V

Voltage Class

1200 V

Apps

Photovoltaic, Motor control, Uninterruptible power supplies (UPS)

Features

  • Coreless transformer isolated
  • 1 A rail-to-rail outputs
  • 300 mil wide-body package
  • Package with 8 mm creepage distance
  • Active Miller clamp

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