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CY14B116N-BA25XI
  • CY14B116N-BA25XI

CY14B116N-BA25XI

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CY14B116N-BA25XI is a 16-Mbit nvSRAM organized as 1024K × 16, combining fast SRAM with QuantumTrap nonvolatile storage. It operates from 2.7 V to 3.6 V over –40°C to 85°C and offers 25-ns access. Data is automatically STORED on power-down and RECALLED on power-up, with software- or pin-initiated STORE/RECALL. Sleep mode current is 10 µA max. It is supplied in a 60-ball FBGA package.

Infineon Technologies CY14B116N-BA25XI Product Info

16 April 2026 0

Parameters

Density

16 MBit

Interfaces

Parallel

Lead Ball Finish

Sn/Ag/Cu

Operating Temperature range

-40 °C to 85 °C

Operating Voltage (VCCQ) max

3.6 V

Operating Voltage range

2.7 V to 3.6 V

Organization (X x Y)

1Mb x 16

Peak Reflow Temp

260 °C

Planned to be available until at least

2031

Qualification

Industrial

Speed

25 ns

Features

  • 16-Mbit nvSRAM, SRAM interface
  • AutoStore on power-down via VCAP
  • STORE via software or HSB pin
  • RECALL via software or power-up
  • QuantumTrap nonvolatile cell tech
  • 1M STORE cycles to QuantumTrap
  • 20-year data retention
  • Infinite SRAM R/W/RECALL cycles
  • Sleep mode current 10 µA max
  • Power-up RECALL duration 30 ms
  • STORE cycle duration 8 ms
  • VCAP capacitor 19.8 µF to 82 µF

Description

  • Retains data through power loss
  • No battery needed for retention
  • Flexible save/restore control
  • Fast restart after power returns
  • High endurance for frequent saves
  • No wear-out from SRAM writes
  • Long service life for stored data
  • Sleep cuts idle power drain
  • 10 µA sleep suits low-power systems
  • Predictable shutdown save time
  • Simple hold-up cap eases design
  • Blocks access during STORE/RECALL

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