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CY7C1370KVE33-167AXM
  • CY7C1370KVE33-167AXM

CY7C1370KVE33-167AXM

Active and preferred

Our synchronous SRAMs are volatile memories ideal to meet the processing power demands for defense processing systems and communication equipment. These memories meet automotive quality and are designed and built with ultimate performance and reliability in mind.

Infineon Technologies CY7C1370KVE33-167AXM Product Info

16 April 2026 0

Parameters

Architecture

NoBL, Pipeline

Bank Switching

N

Data Width

x 36

Density

18 MBit

Family

Synchronous SRAM with ECC

Frequency

167 MHz

Interfaces

Parallel

Lead Ball Finish

Pure Sn

On-Die Termination

N

Operating Temperature range

-55 °C to 125 °C

Operating Voltage range

3.135 V to 3.6 V

Organization (X x Y)

512Kb x 36

Peak Reflow Temp

260 °C

Planned to be available until at least

2033

Qualification

Military

Read Latency (Cycles)

2

Features

  • 18 Mbit Density
  • 512K x 36 organization
  • No Bus Latency (NoBL logic)
  • 3.4ns access speed
  • On chip Error Correction Code (ECC)
  • 100-pin TQFP package
  • –55 °C to 125 °C mil-temp range

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