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CY14B116M-BZ45XI
  • CY14B116M-BZ45XI

CY14B116M-BZ45XI

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CY14B116M-BZ45XI is a 16-Mbit (1024 K × 16) parallel nvSRAM with integrated RTC, combining fast SRAM with QuantumTrap nonvolatile storage. It operates from 2.7 V to 3.6 V over –40°C to +85°C and offers 45 ns access. Data is automatically STORED on power-down using a 19.8 µF to 82 µF VCAP capacitor and RECALLED on power-up; supports 1M STORE cycles and 20-year retention for reliable data logging.

Infineon Technologies CY14B116M-BZ45XI Product Info

16 April 2026 1

Parameters

Alarms

Y

Density

16 MBit

Interfaces

Parallel

Lead Ball Finish

Sn/Ag/Cu

Operating Temperature range

-40 °C to 85 °C

Operating Voltage (VCCQ) max

3.6 V

Operating Voltage range

2.7 V to 3.6 V

Organization (X x Y)

1Mb x 16

Peak Reflow Temp

260 °C

Planned to be available until at least

2031

Qualification

Industrial

Real Time Clock

Y

Speed

45 ns

Watchdog Timer

Y

Apps

Edge computing

Features

  • 16-Mbit nvSRAM (SRAM + NV)
  • 2048K×8 or 1024K×16 array
  • 25 ns / 45 ns access options
  • AutoStore on power-down
  • STORE via software or HSB pin
  • RECALL via power-up or software
  • 1 million STORE cycles
  • 20-year data retention
  • VCC supply 2.7 V to 3.6 V
  • Sleep mode with RTC running
  • 10 µA max sleep mode current
  • RTC alarm, WDT, sq wave out

Description

  • SRAM speed with NV data safety
  • Fits x8 or x16 legacy buses
  • 25 ns/45 ns cuts wait states
  • Auto-save prevents data loss
  • STORE on demand for events
  • Fast restore after power-up
  • Endurance supports data logging
  • Long retention cuts maintenance
  • Single 2.7-3.6 V rail eases design
  • Sleep mode reduces system power
  • 10 µA sleep helps battery life
  • RTC blocks reduce external ICs

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