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BUP06CN035L-01
  • BUP06CN035L-01

BUP06CN035L-01

Active and preferred

Radiation tolerant, 60V, 52A, N-channel MOSFET, PG-TO263, 30krad(Si) TID

Infineon Technologies BUP06CN035L-01 Product Info

16 April 2026 0

Parameters

Die Size

3

ESD Class

1C

ID (@25°C) max

52 A

IDpuls

100 A

Operating Temperature range

-40 °C to 125 °C

Package

PG-TO263-3

Polarity

N

Ptot

150 W

QG (typ @10V)

26 nC

Qualification

AEC-Q101

RDS (on) (@10V) max

35 mΩ

Technology

CoolMOS™

TID max

30 Krad(Si)

VBRDSS min

60 V

VDS max

60 V

VGS(th) range

2 V to 4 V

VGS

20

Features

  • Optimized for LEO missions and constellations
  • Radiation tolerant (LET of 46 MeV∙cm²/mg)
  • Qualified according to AEC-Q101 standard

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