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RIC7S113E4SCS
  • RIC7S113E4SCS

RIC7S113E4SCS

Active and preferred

Rad hard high voltage, high speed power MOSFET and IGBT driver RIC7S113E4SCS has independent high and low side referenced output channels. Intended for harsh radiation environments such as space, its electrical parameters are specified pre and post-irradiation up to 100 krad(Si) and SEE characterized up to a linear energy transfer (LET) of 81.9 MeV·cm2/mg. Screened per MIL-PRF-38535 Level S and in LCC CIC hermetic packaging.

Infineon Technologies RIC7S113E4SCS Product Info

16 April 2026 0

Parameters

Bias Supply Voltage range

5 V to 20 V

Channels

2

Configuration

High-side and low-side

Language

SPICE

Output Voltage max

20 V

OverClocking

Delay Matching 20 (ns)

Package

LCC-18

Product Category

HiRel Power ICs

SEE

81.9 MeV∙cm2/mg

Supply Voltage range

10 V to 20 V

TID max

100 Krad(Si)

Voltage Class

100 V

VS max

400 V

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