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BTF3050TE
  • BTF3050TE

BTF3050TE

Active and preferred

The power transistor is built by a N-channel vertical power MOSFET. The device is monolithically integrated. The BTF3050TE is automotive qualified and is optimized for 12V automotive and industrial applications.

Infineon Technologies BTF3050TE Product Info

16 April 2026 0

Parameters

Certifications

ISO 26262-ready

Channels

1

Classification

ISO 26262-ready

Control Interface

Discrete

Diagnostic Features

Output Status

Diagnostics

Digital

EAS/Avalanche Energy

120 mJ

EAS (Energy capability)

120 mJ

Family

HITFET™ + 12V

ID(lim) min

8 A

ID

3 A

IL(LIM)_TRIGGER min

30 A

IL(LIM) min

8 A

IL(nom)

3 A

IL (Short Circuit Current)

8 A

ISC max

60 A

Load Current

3 A

Mounting

SMT

Nominal Load Current per channel

3 A

Operating Temperature range

-40 °C to 150 °C

Planned to be available until at least

2039

Protection strategy

Auto-restart

RDS (on) (@ Tj = 25°C)

40 mΩ

RDS (on) (@ Tj = 150°C) max

100 mΩ

Recommended Operating Voltage max

40 V

toff (Turn OFF time) max

5 µs

ton (Turn ON time) max

5 µs

VDS max

40 V

Apps

Automotive body control module (BCM), Automotive battery management system (BMS) - high-voltage

Features

  • Low Power DMOS leakage current in OFF
  • 3.3V & 5V compatible logic inputs
  • Electrostatic discharge protection (ESD)
  • Adjustable switching speed
  • Digital feedback with auto-restart
  • Green Product (RoHS compliant)
  • AEC Qualified

Description

  • Increased robustness
  • Selectable Slew-Rate
  • 3.3V Microcontroller compatible
  • Low DMOS leakage current

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