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BGSX33M5U16
  • BGSX33M5U16

BGSX33M5U16

Active and preferred

The BGSX33M5U16 RF CMOS switch is specifically designed for LTE and 5G antenna applications. This 3P3T cross-switch offers low insertion loss and low harmonic generation.The switch is controlled via a MIPI RFFE control interface. The on-chip controller allows power-supply voltages from 1.65 to1.95 V. Unlike GaAs technology, external DC blocking capacitors at the RF ports are only required if DC voltage is applied externally. The device has a very small size of only 2.0 mm x 2.0 mm and a thickness of 0.6 mm.

Infineon Technologies BGSX33M5U16 Product Info

16 April 2026 0

Parameters

Control Interface

MIPI 2.1

Frequency Range range

0.4 GHz to 7.125 GHz

Frequency Range

0.4 – 7.125 GHz

Insertion Loss

0.41 dB

Isolation

45 dB

Pmax

38 dBm

Size

2.0 x 2.0 mm²

Supply Voltage range

1.65 V to 1.95 V

Supply Voltage

1.65 – 1.95 V

Switch Type

3P3T

Apps

Automotive telematics control unit (TCU), Telecommunications infrastructure, Mobile device and smartphone solutions

Features

  • High linearity up to 38 dBm peak power
  • Fast switching time (max 2 µs) for 5G SRS applications
  • Low insertion loss and high port to port isolation up to 7.125 GHz
  • Enhanced isolation mode
  • Low power consumption allows supply VIO
  • MIPI RFFE 2.1 control interface
  • Software and hardware programmable USID
  • RoHS and WEEE compliant package

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