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IAUZ40N06S5N105
  • IAUZ40N06S5N105

IAUZ40N06S5N105

Active and preferred

The new OptiMOS™ 5 technology for 60V MOSFETs in the industry standard S3O8 (3x3 mm²) small footprint package with leading performance providing low RDSon, QG and Gate capacitance and minimizing conduction and switching losses.

Infineon Technologies IAUZ40N06S5N105 Product Info

16 April 2026 0

Parameters

Country of Assembly (Last BE site, current, subject to change)

Malaysia

Country of Diffusion (Last FE site, current, subject to change)

Germany

ID (@25°C) max

40 A

Launch year

2021

Operating Temperature range

-55 °C to 175 °C

Package

PG-TSDSON-9

Planned to be available until at least

2038

Polarity

N

QG (typ @10V)

12.6 nC

QG (typ @10V) max

16.3 nC

Qualification

Automotive

RDS (on) (@10V) max

10.5 mΩ

RthJC max

3.6 K/W

Technology

OptiMOS™5

VDS max

60 V

VGS(th) range

2.2 V to 3.4 V

VGS(th)

2.8 V

Features

  • Extended qualification beyond AEC-Q101
  • Excellent thermal performance
  • Low gate charge and Qrr
  • 20% higher current capability
  • PPAP Capable Device

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