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BGAP2S20A
  • BGAP2S20A

BGAP2S20A

Active and preferred

The BGA P2S20A is a 2.3 to 2.7 GHz low-band driver amplifier that can be used as pre-driver or driver in RF applications from massive MIMO 5G base stations to small cells and access points. The SiGe based amplifier offers best RF performance and a high OP1dB: 28.9 dBm. The driver amplifier is typically placed between transceiver IC and power amplifier but can also be used as power amplifier for low power applications. The input and outputs are single-ended and internally matched to 50 Ω. The driver amplifier boasts high linearity and an excellent wide-band gain flatness of <0.3 dB for optimum linearization results of the driven PA.

Infineon Technologies BGAP2S20A Product Info

16 April 2026 0

Parameters

ACLR

-47.1 dBc

Frequency Range range

2.3 GHz to 2.7 GHz

Gain Flatness max

0.22 dB

Gain

34.8 dB

Noise Figure

3.8 dB

OIP3

34.2 dBm

OP1dB

28.9 dBm

Supply Voltage

5 V

Features

  • Supply voltage: 5V
  • Gain Flatness: 0.22 dB
  • High Gain: 34.8 dB
  • High OP1dB: 28.9 dBm
  • Low-band: 2.3 - 2.7GHz
  • Packaging: TSNP-16

Description

  • BiCMOS technology for an optimized performance
  • High gain and high power for fewer components in line-up
  • Wide BW 2.3-2.7 GHz with best gain flatness
  • Internally matched to 50 Ω, saving external matching components
  • Easy design-in and small area  footprint

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