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AIKB15N65DH5
  • AIKB15N65DH5

AIKB15N65DH5

The 650V TRENCHSTOP™ 5 AUTO technology with H5/F5 optimization from Infineon prioritizes energy efficiency for electric and hybrid vehicles. Its IGBT technology delivers exceptional efficiency, contributing to increased EV range, downsized batteries, and reduced fuel consumption in hybrids. Additionally, its SMD housing reduces IGBT solution costs and enhances quality control through automation.

Infineon Technologies AIKB15N65DH5 Product Info

16 April 2026 0

Parameters

Co-pack diode technology

RAPID1

IC (@ 100°) max

15 A

IC (@ 25°) max

30 A

Launch year

2020

Package

D2PAK (TO-263-3)

Reflow Solderable

Yes

Switching Frequency

15-100 kHz

Technology

IGBT TRENCHSTOP™ 5

Type

IGBT + Diode

VCE(sat)

1.65 V

VCE max

650 V

Voltage Class max

650 V

Features

  • TRENCHSTOP™ 5 technology with low VCEsat, optimized as H5 variant (High Speed Variant) with softer switching behavior for easier design-in
  • 650V break-down voltage, 30A nominal current
  • Co-packed with RAPID-1 fast and soft anti-parallel diode
  • Very fast switching (up to 150kHz)
  • Automotive qualified in accordance to Infineon quality standards
  • Max junction temperature 175 °C
  • Highest efficiency
  • very low conduction losses
  • very low switching losses
  • Very low junction and case temperature
  • SMD D2PAK package for low assembly costs and higher power density
  • Extremely robust

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