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BGA7H1N6
  • BGA7H1N6

BGA7H1N6

Active and preferred

Silicon Germanium Low Noise Amplifier for LTE

Infineon Technologies BGA7H1N6 Product Info

16 April 2026 0

Parameters

Frequency

2300 - 2690 MHz

Gain

12.5 dB

I

4.8 mA

IIP3

6 dBm

NF

0.65 dB

P-1dB (in)

-1 dBm

VCC operating range

1.5 V to 3.3 V

Apps

Automotive telematics control unit (TCU), Mobile device and smartphone solutions

Features

  • Insertion power gain: 12.5 dB
  • Low noise figure: 0.60 dB
  • Low current consumption: 4.7 mA
  • Operating frequencies: 2300 - 2690 MHz
  • Supply voltage: 1.5 V to 3.3 V
  • Digital on/off switch (1V logic high level)
  • Ultra small TSNP-6-2 leadless package (footprint: 0.7 x 1.1 mm2)
  • B7HF Silicon Germanium technology
  • RF output internally matched to 50 Ω
  • Only 1 external SMD component necessary
  • 2kV HBM ESD protection (including AI-pin)
  • Pb-free (RoHS compliant) package

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