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BFP450
  • BFP450

BFP450

High Linearity Low Noise Si NPN RF Transistor

Infineon Technologies BFP450 Product Info

16 April 2026 0

Parameters

Gmax

19 dB @900 MHz

IC max

100 mA

NFmin

1.6 dB @900 MHz

OIP3

29 dBm @900 MHz

OP1dB

19 dBm @900 MHz

Package

SOT343

VCEO max

4.5 V

Features

  • Highly linear low noise driver amplifier for all RF frontends up to 2.5 GHz
  • Output compression point OP1dB = 18.5 dBm at 90 mA, 3 V, 1.9 GHz, 50 Ω system
  • Output 3rd order intermodulation point OIP3 = 31 dBm at 90 mA, 3 V, 1.9 GHz, 50 Ω system
  • Maximum available gain Gma = 15.5 dB at 50 mA, 3 V, 1.9 GHz
  • Minimum noise figure NFmin = 1.7 dB at 50 mA, 3 V, 1.9 GHz
  • Based on Infineon´s reliable, high volume 25 GHz SIEGET™ line
  • Easy to use Pb-free (RoHS compliant) standard package with visible leads

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