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S70FL01GSAGMFV013
  • S70FL01GSAGMFV013

S70FL01GSAGMFV013

Active and preferred

The S70FL01GSAGMFV013 is a 1 Gbit (128 Mbyte) automotive-grade dual-die stack SPI NOR Flash memory, operating at 3.0 V with Multi-I/O and 133 MHz clock. It features 256 kB uniform sectors, 100,000 program-erase cycles, and 20-year data retention. Each die is independently managed with advanced block protection and security. Qualified to AEC-Q100 Grade 1 (−40°C to +125°C), it ensures robust data integrity for automotive and industrial applications.

Infineon Technologies S70FL01GSAGMFV013 Product Info

16 April 2026 0

Parameters

Density

1 GBit

Family

FL-S

Interface Bandwidth

52 MByte/s

Interface Frequency (SDR/DDR) (MHz)

133 / -

Interfaces

Quad SPI

Lead Ball Finish

Matte Tin Plating

Operating Temperature range

-40 °C to 105 °C

Operating Voltage range

2.7 V to 3.6 V

Operating Voltage

3 V

Peak Reflow Temp

260 °C

Planned to be available until at least

2035

Qualification

Industrial

Features

  • Dual-die stack architecture
  • SPI Multi-I/O interface
  • Supports DDR and SDR modes
  • 32-bit extended addressing
  • Page programming buffer: 512 bytes
  • Uniform 256 KB sectors
  • 100,000 program-erase cycles min
  • 20-year data retention min
  • One Time Program (OTP) 2048 bytes
  • Block protection with advanced sector
  • Core voltage: 2.7 V to 3.6 V
  • I/O voltage: 1.65 V to 3.6 V

Description

  • Enables 1 Gbit high-density storage
  • Flexible interface for various controllers
  • High-speed data transfer with DDR
  • Large address space for big data
  • Fast programming for efficient updates
  • Simplifies memory management
  • Reliable for frequent rewriting
  • Long-term data reliability
  • Secure storage for sensitive data
  • Prevents accidental data changes
  • Compatible with 3 V systems
  • Flexible I/O for system integration

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