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S29GL01GS11FHIV13
  • S29GL01GS11FHIV13

S29GL01GS11FHIV13

Active and preferred

The S29GL01GS11FHIV13 is a 1 Gb parallel MIRRORBIT™ Eclipse flash memory built on 65 nm technology for embedded and automotive systems. It features a 3.0 V core, I/O voltage range from 1.65 V to 3.6 V, uniform 128 kB sectors, and page access times as fast as 15 ns. Write buffer programming up to 512 bytes and automatic ECC enhance data integrity.

Infineon Technologies S29GL01GS11FHIV13 Product Info

16 April 2026 0

Parameters

Density

1 GBit

Family

GL-S

Initial Access Time

110 ns

Interface Frequency (SDR/DDR) (MHz)

NA

Interfaces

Parallel

Lead Ball Finish

Sn/Ag/Cu

Operating Temperature range

-40 °C to 85 °C

Operating Voltage range

2.7 V to 3.6 V

Operating Voltage

3 V

Page Access Time

15 ns

Peak Reflow Temp

260 °C

Planned to be available until at least

2035

Qualification

Industrial

Features

  • 65 nm MIRRORBIT™ Eclipse technology
  • CMOS 3.0 V core with versatile I/O
  • Single supply for read/program/erase
  • Versatile I/O voltage range: 1.65 V to VCC
  • 16-bit data bus
  • Asynchronous 32-byte page read
  • 512-byte programming buffer
  • Internal hardware ECC with single bit
  • Uniform 128 KB sectors
  • Suspend/resume for program and erase
  • Advanced sector protection (ASP)
  • 1024-byte one time program (OTP) array

Description

  • High reliability with 65 nm process
  • Flexible I/O supports system integration
  • Easy power supply design
  • Supports wide I/O voltage range
  • Fast data transfers with 16-bit bus
  • Efficient page read for fast access
  • Fast programming with large buffer
  • ECC enhances data integrity
  • Simple sector management
  • Interruptible program/erase for flexibility
  • Robust data and sector protection
  • Secure OTP for permanent data

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