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BCR198
  • BCR198

BCR198

PNP Silicon Digital Transistor

Infineon Technologies BCR198 Product Info

16 April 2026 0

Parameters

fT

190 MHz

hFE min

70

ICBO max

100 nA

Mounting

SMT

Polarity

PNP (Single)

Ptot max

200 mW

R1 / R2

1

R1

47 kΩ

R2

47 kΩ

VCBO max

50 V

VCE(sat) max

0.3 V

VCEO max

50 V

VEBO max

10 V

Vi (off) max

1.5 100µA / 5V

Vi (on) max

1.5 V

Vi (on) min

1 2mA / 0.3V

Features

  • Switching circuit, inverter, interface circuit, driver circuit
  • Built in bias resistor (R1 = 47 kΩ , R2 = 47 kΩ )
  • BCR198S: Two internally isolated transistors with good matching in one multichip package
  • BCR198S: For orientation in reel see package information below
  • Pb-free (RoHS compliant) package
  • Qualified according AEC Q101

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