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BAT17-04W
  • BAT17-04W

BAT17-04W

Active and preferred

These Infineon RF Schottky diodes are silicon low barrier N-type devices with an integrated guard ring on-chip for overvoltage protection. Their low barrier height, small forward voltage and low junction capacitance, make BAT17-04W a suitable choice for mixer and detector applications at frequencies as high as 6 GHz.

Infineon Technologies BAT17-04W Product Info

16 April 2026 0

Parameters

C @VR=0V

0.61 pF

Configuration

Series pair

IF max

130 mA

VF max

0.45 V

VF

0.34 V

VR max

4 V

Features

  • Low inductance Ls = 1.4 nH (typical)
  • Low capacitance C = 0.61 pF (typical) at frequency f = 1 MHz
  • Industry standard SOT323-3 package (2.1 mm x 2 mm x 0.9 mm)
  • Pb-free, RoHS compliant and halogen free

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