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AIMBG120R060M1
  • AIMBG120R060M1

AIMBG120R060M1

Active and preferred

With Infineon’s performance optimized chip technology (Gen1p), the SiC MOSFET features best-in-class switching performance, robustness against parasitic turn-ons, as well as improved RDSon and Rth(j-c). High power density, superior efficiency, bi-directional charging capabilities and significant reductions in system costs making it an ideal choice for on-board charger and DCDC applications.

Infineon Technologies AIMBG120R060M1 Product Info

16 April 2026 0

Parameters

Ciss

880 pF

Coss

43 pF

ID (@25°C) max

38 A

Launch year

2023

Operating Temperature range

-55 °C to 175 °C

Package

TO-263-7

Planned to be available until at least

2033

Polarity

N

Ptot (@ TA=25°C) max

202 W

QG

32 nC

Qualification

Automotive

RDS (on) (@ Tj = 25°C)

60 mΩ

RthJC max

0.74 K/W

Technology

CoolSiC™ G1

VDS max

1200 V

VGSS, off

0

VGSS, on

20

Apps

Electric vehicle drivetrain system, DC-DC converter high-voltage, On-board charging (OBC), Fuel-cell control unit (FCCU)

Features

  • OptiMOS™ 5 - power MOSFET for automotive applications
  • N-channel - Enhancement mode - Logic Level
  • AEC Q101 qualified
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • Green Product (RoHS compliant)
  • 100% Avalanche tested

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