Product
0
IQDH88N06LM5CG
  • IQDH88N06LM5CG

IQDH88N06LM5CG

Active and preferred

The power MOSFET IQDH88N06LM5CG 60 V comes in a PQFN 5x6 mm2 Source-Down package. The part offers the industry’s lowest RDS(ON) of 0.88 mΩ combined with outstanding thermal performance for easy power loss management. This enables higher system efficiency and power density for a large variety of end applications like class-D audio, high-power chargers, SMPS, telecom, and intermediate bus conversion in high-performance computing, like hyper-scale datacenters and AI-server farms.

Infineon Technologies IQDH88N06LM5CG Product Info

16 April 2026 0

Parameters

Budgetary Price €/1k

1.77

ID (@25°C) max

447 A

IDpuls max

1788 A

Operating Temperature range

-55 °C to 175 °C

Package

PQFN 5x6 Source-Down

Polarity

N

QG (typ @4.5V)

76 nC

QG (typ @10V)

152 nC

RDS (on) (@4.5V) max

1.24 mΩ

RDS (on) (@10V) max

0.86 mΩ

Special Features

Logic Level, Center-Gate

VDS max

60 V

VGS(th) range

1.1 V to 2.3 V

VGS(th)

1.7 V

Features

  • OptiMOS™ 60 V with outstanding FOMs
  • Source-Down package with thermal
  • Source-Down with maximized chip ratio
  • Source-Down in Center-Gate footprint

Description

  • Minimized conduction losses
  • Reduced voltage overshoot
  • Increased maximum current capability
  • Fast switching
  • Less device paralleling required
  • Center-Gate for optimal parallelization
  • Low RDS(on) on 5x6 mm² PCB
  • Enhanced thermal management
  • Minimal parasitics, optimal switching
  • Industry standard package

Subscribe to Welllinkchips !
Your Name
* Email
Popular Posts
Featured Parts More >
Submit a request
CONTACT US
Company address

WELL LINK CHIPS GROUP CO.,LIMITED FLAT/RM 1802 BEVERLY HOUSE 93-107 LOCKHART ROAD WANCHAI HK

Send Enquiry
SEND e-MAIL
Office hour from 9am to 6pm ,
Monday through Friday, UTC/GMT +8