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AIKQB200N75CP2
  • AIKQB200N75CP2

AIKQB200N75CP2

Active and preferred

The AIKQB200N75CP2 discrete IGBT in a 3-Pin TO247PLUS package with 750V EDT2 technology, ideal for high voltage automotive applications supporting up to 470V battery voltages. It enables easy paralleling, system flexibility and power scalability. Upgrading existing designs with AIKQ200N75CP2 by using reflow soldering assembly enhances system performance with up to 40% better thermal conductivity.

Infineon Technologies AIKQB200N75CP2 Product Info

16 April 2026 0

Parameters

Co-pack diode technology

EMCON3

Eon

15.3 mJ

IC (@ 25°) max

200 A

IC (@ 100°) max

200 A

ICpuls max

600 A

IF max

200 A

IFpuls max

600 A

Irrm

41 A

Launch year

2024

Package

TO-247PLUS-3

Ptot max

938 W

QGate

1270 nC

Qrr

4.7 nC

Reflow Solderable

Yes

Switching Frequency

7kHz - 15kHz

td(off)

266 ns

td(on)

89 ns

Technology

EDT2

tf

46 ns

tr

120 ns

Type

IGBT + Diode

VCE(sat) max

1.55 V

VCE(sat)

1.4 V

VCE max

750 V

VF

1.8 V

Features

  • Best-in-class 750 V TO247PLUS
  • Suitable for 470 V VDC systems
  • Very low VCEsat
  • Short circuit robust tsc = 3 µs
  • Qualified Reflow device at 260°C
  • Self limiting short-circuit current
  • Very tight parameter distribution
  • Low gate charge QG
  • Resistive weldable pins
  • High creepage distance
  • Product Validation acc. to AEC-Q101

Description

  • Benchmark quality & switching behavior
  • Ideal for automotive requirements
  • Excellent parallel operation
  • High reliability and operating lifetime
  • Low switching losses and cooling effort
  • Various power classes - same package
  • Power scalability and cost optimization
  • High power output by reflow-soldering
  • Low costs per Ampere on system level
  • Low EMI signature
  • Simple gate drive design
  • Drop-in replacement

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