Product
0
FF800R12KE7P_E
  • FF800R12KE7P_E

FF800R12KE7P_E

Active and preferred

62 mm 1200 V, 800 A half-bridge IGBT module with TRENCHSTOP™ IGBT7 and emitter controlled diode.

Infineon Technologies FF800R12KE7P_E Product Info

16 April 2026 0

Parameters

Configuration

half-bridge

Dimensions (width)

61.4 mm

Dimensions (length)

106.4 mm

Features

TIM

Housing

62 mm

IC(nom) / IF(nom)

800 A

IC max

800 A

Qualification

Industrial

Technology

IGBT7 - E7

VCE(sat) (Tvj=25°C typ)

1.5 V

VCES / VRRM

1200 V

VF (Tvj=25°C typ)

1.8 V

Voltage Class max

1200 V

Apps

Battery energy storage (BESS), General purpose motor drive, Central inverter solutions, Uninterruptible power supplies (UPS)

Features

  • Highest power density
  • Best-in-class VCEsat
  • Tvj op = 175°C overload
  • High creepage & clearance distances
  • Isolated base plate
  • Standard housing
  • RoHS compliant
  • 4 kV AC 1 min insulation
  • Package with CTI > 400
  • UL/CSA certif. with UL1557 E83336

Description

  • higher current capability
  • for NPC2 in 3-level configuration
  • Highest power density
  • Avoidance of paralleling of IGBT modules
  • Reduced system costs
  • Highest reliability

Subscribe to Welllinkchips !
Your Name
* Email
Popular Posts
Featured Parts More >
Submit a request
CONTACT US
Company address

WELL LINK CHIPS GROUP CO.,LIMITED FLAT/RM 1802 BEVERLY HOUSE 93-107 LOCKHART ROAD WANCHAI HK

Send Enquiry
SEND e-MAIL
Office hour from 9am to 6pm ,
Monday through Friday, UTC/GMT +8