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AIKB15N65DF5
  • AIKB15N65DF5

AIKB15N65DF5

Infineon's 650V TRENCHSTOP™ 5 AUTO technology with H5/F5 optimization enhances energy efficiency in fast-switching automotive applications, offering the world’s lowest losses for increased electric vehicle range or downsized batteries, and reduced fuel consumption in hybrids. Its SMD housing reduces costs and improves quality control.

Infineon Technologies AIKB15N65DF5 Product Info

16 April 2026 1

Parameters

Co-pack diode technology

RAPID1

IC (@ 100°) max

15 A

IC (@ 25°) max

30 A

Launch year

2020

Package

D2PAK (TO-263-3)

Reflow Solderable

Yes

Switching Frequency

15-120 kHz

Technology

IGBT TRENCHSTOP™ 5

Type

IGBT + Diode

VCE max

650 V

VCE

1.6 V

Voltage Class max

650 V

Features

  • TRENCHSTOP™ 5 technology with low VCEsat, optimized as F5 variant (Highest Efficiency Variant) for highest possible switching speed
  • 650V break-down voltage, 15A nominal current
  • Co-packed with RAPID-1 fast and soft anti-parallel diode
  • Very fast switching (up to 150kHz)
  • Automotive qualified in accordance to Infineon quality standards
  • Max junction temperature 175 °C
  • Highest efficiency
  • very low conduction losses
  • very low switching losses
  • Very low junction and case temperature
  • SMD D2PAK package for low assembly costs and higher power density
  • Extremely robust

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