Product
0
FZ1200R33HE4D_B9
  • FZ1200R33HE4D_B9

FZ1200R33HE4D_B9

Active and preferred

Infineon Technologies FZ1200R33HE4D_B9 Product Info

16 April 2026 0

Parameters

Configuration

Single switch

Dimensions (width)

140 mm

Dimensions (length)

190 mm

Features

Optimized IGBT Diode Ratio

Housing

IHV B

IC(nom) / IF(nom)

1200 A

IC max

1200 A

Qualification

Industrial, Traction

Technology

IGBT4 - E4

VCE(sat) (Tvj=25°C typ)

2.4 V

VCES / VRRM

3300 V

VF (Tvj=25°C typ)

2.6 V

Voltage Class max

3300 V

Apps

Medium voltage (MV) drive, Traction

Features

  • High DC stability
  • High short-circuit capability
  • Low switching losses
  • Low VCEsat
  • Rectangular non truncated (RB-)SOA
  • Tvj op=150°C
  • AlSiC base plate with AlN substrate
  • for increased Thermal cycling
  • Fire & smoke EN45545 R22, R23 : HL3
  • Package with CTI > 600
  • 2x PowerCycling vs state of the art
  • Enlarged diode for regeneration

Description

  • Standardized housing: 190x140x38 mm
  • Unbeatable dynamic robustness
  • Long service life
  • 2xPC = 110% power at same lifetime
  • or 200% lifetime
  • or 8K more safety buffer
  • Fault current RBSOA up to 3000 A
  • Performance like any 1500 A 3.3 kV
  • 1:1 mechanical compatible:
  • to three former generations
  • Low FIT Rate
  • UL recognized

Subscribe to Welllinkchips !
Your Name
* Email
Popular Posts
Featured Parts More >
Submit a request
CONTACT US
Company address

WELL LINK CHIPS GROUP CO.,LIMITED FLAT/RM 1802 BEVERLY HOUSE 93-107 LOCKHART ROAD WANCHAI HK

Send Enquiry
SEND e-MAIL
Office hour from 9am to 6pm ,
Monday through Friday, UTC/GMT +8