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5962R2321302VXC
  • 5962R2321302VXC

5962R2321302VXC

Active and preferred

Our rad hard F-RAM is one of the industry’s lowest power, non-volatile memory solutions that is Single Event Upset (SEU) immune and virtually unlimited endurance. Infineon’s instant non-volatile write technology and greater than 100-year data retention provides the highest reliability for space applications.

Infineon Technologies 5962R2321302VXC Product Info

16 April 2026 0

Parameters

Density

1 MBit

Device weight

1716.9 mg

Family

F-RAM

Interfaces

Parallel

Lead Ball Finish

Au

Operating Temperature range

-55 °C to 125 °C

Operating Voltage range

2 V to 3.6 V

Organization (X x Y)

128K x 8

Peak Reflow Temp

260 °C

Planned to be available until at least

2033

Qualification

Military

Features

  • 1 Mb density (128K x 8)
  • 10-trillon read/write cycle endurance
  • 120 years data retention at +85°C
  • Extremely low programming voltage (2V)
  • Low operating current (20 mA max)
  • DLAM QML-V qualified SMD 5962-23213 (1 and 2Mb F-RAM)
  • Radiation performance:
  • TID: > 150 Krad (Si)
  •  SEL: > 96 MeV.cm2/mg [LET]@ 115°C
  • SEU: IMMUNE
  • SEFI: 5.35e-5 err/dev.day (standby mode)
  • SEFI: IMMUNE (sleep mode)

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