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1EDC60H12AH
  • 1EDC60H12AH

1EDC60H12AH

EiceDRIVER™ 1200 V high-side single channel gate driver IC with typical 10.0 A source and 9.4 A sink currents in a wide-body package with CT technology for IGBT Modules .For higher isolation rating, higher current, shorter propagation delay, check out our newly released X3 Compact family , 1ED3124MU12H . The DSO-8 150mil narrow body version with great price performance ratio is also available: 1EDI60N12AF

Infineon Technologies 1EDC60H12AH Product Info

16 April 2026 0

Parameters

Channels

1

Configuration

High-side

Input Vcc range

3.1 V to 17 V

Isolation Type

Galvanic isolation - Functional

Output Current (Source)

10 A

Output Current (Sink)

9.4 A

PDout

400 mW

Qualification

Industrial

RDSON_H(max)

1.4 Ω

RDSON_H(typ)

0.75 Ω

RDSON_L (max)

1.7 Ω

RDSON_L(typ)

0.75 Ω

RthJA

165 K/W

Turn Off Propagation Delay

125 ns

Turn On Propagation Delay

120 ns

VBS UVLO (On)

12 V

VBS UVLO (Off)

11.1 V

VCC UVLO (Off)

2.75 V

VCC UVLO (On)

2.85 V

Voltage Class

1200 V

Apps

Medium voltage IBC (48 V), Automotive secondary power distribution unit, EV charging, Hydrogen electrolysis, 1-phase string inverter solutions, Power conversion

Features

  • Recognized under UL1577
  • With VISO= 3000 V for 1 s
  • 1200V coreless Transformer
  • 6 A rail-to-rail outputs
  • 300 mil wide-body package
  • 8 mm creepage distance
  • Separate source/sink outputs

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